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Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique

Title:
Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique
Year:
1992
Publication type:
Journal article
Journal:
Journal of Crystal Growth
ISSN:
1873-5002
Number:
4
Volume:
121
Pages:
781-789
Language:
English
Document status:
Published
PubListerURL:
https://publister.bib.th-wildau.de/publister/public/publication/2200
Doerschel, J., & Geißler, U. (1992). Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique Journal of Crystal Growth. 121 (4), 781-789.
@article{2200,
    author           = {Doerschel, Jürgen and Geißler, Ute},
    title            = {Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique},
    journal          = {Journal of Crystal Growth},
    year             = {1992},
    volume           = {121},
    number           = {4},
    pages            = {781-789},
    doi              = {10.1016/0022-0248(92)90586-8},
}


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