Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique
Title:
Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique
Authors:
Year:
1992
Publication type:
Journal article
Journal:
Journal of Crystal Growth
ISSN:
1873-5002
Number:
4
Volume:
121
Pages:
781-789
Language:
English
Document status:
Published
PubListerURL:
https://publister.bib.th-wildau.de/publister/public/publication/2200
Doerschel, J., & Geißler, U. (1992). Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique Journal of Crystal Growth. 121 (4), 781-789.
@article{2200,
author = {Doerschel, Jürgen and Geißler, Ute},
title = {Characterization of extended defects in highly Te-doped GaSb single crystals grown by the Czochralski technique},
journal = {Journal of Crystal Growth},
year = {1992},
volume = {121},
number = {4},
pages = {781-789},
doi = {10.1016/0022-0248(92)90586-8},
}