Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process

Title:
Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process
Abstract:
Through Silicon Via (TSV) technology is a key in 3D integration of circuits by the creation of interconnects using vias, which go through the full silicon wafer. Typically, a highly-selective Bosch Si etch process is used. It is characterized by a high etch rate at a high aspect ratio, whereby scallops on the sidewalls are generated. In this work, square via arrays with dimensions from 3 to 50 μm and up to 300 μm depth were fabricated and analyzed by spectroscopic reflectometry. The reflectometric data are compared to simulations by a novel theoretical approach. In order to simulate the reflectance spectra of TSV arrays, a combination of 2D and 3D rigorous coupled wave analysis was applied. Besides the via depth, the sidewall angle and the corner radius of the bottom profile were considered in the model. The general requirements on spectral resolution in TSV metrology are discussed.
Year:
2019
Publication type:
Journal article
Journal:
Journal of Vacuum Science and Technology B
ISSN:
2166-2754
Number:
6
Volume:
37
Pages:
062205
Language:
English
Document status:
Open access
PubListerURL:
https://publister.bib.th-wildau.de/publister/public/publication/2759
Bauer, J., Fursenko, O., Marschmeyer, S., Heinrich, F., Villasmunta, F., Villringer, C., et al. (2019). Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process Journal of Vacuum Science and Technology B. 37 (6), 062205.
@article{2759,
    author           = {Bauer, Joachim Max and Fursenko, Oksana and Marschmeyer, S. and Heinrich, Friedhelm and Villasmunta, Francesco and Villringer, Claus and Zesch, Christoph and Schrader, Sigurd K.},
    title            = {Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process},
    journal          = {Journal of Vacuum Science and Technology B},
    year             = {2019},
    volume           = {37},
    number           = {6},
    pages            = {062205},
    publisher        = {American Vacuum Society (AVS)},
    doi              = {10.1116/1.5120617},
}


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